STUDIES OF THE LATTICE DAMAGE CAUSED BY ION IMPLANTATION INTO AlxGa1-xAS/GaAs

Bao An GONG, Xiao Li HAN, Dai Qing LI, Ting Qi REN, Ya WAN

　

Search
Submit
E-mail
RSS
Chinese Chemical Letters ›› 1994, Vol. 5 ›› Issue (08) : 707-710.
Article

STUDIES OF THE LATTICE DAMAGE CAUSED BY ION IMPLANTATION INTO AlxGa1-xAS/GaAs

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 1994, 5(08): 707-710

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}

Accesses

Citation

Detail
Sections
Recommended
Copyright © Editorial Office of Chinese Chemical Letters
Address: 1 Xian Nong Tan Street, Xicheng District, Beijing, China　Zip code: 100050
Phone: 86-10-63165638　Email: cclbj@imm.ac.cn

/

〈 〉