Stacking driven Raman spectra change of carbon based 2D semiconductor C<sub>3</sub>N

doi:10.1016/j.cclet.2021.09.098

中国化学快报 ›› 2022, Vol. 33 ›› Issue (05) : 2600-2604. DOI: 10.1016/j.cclet.2021.09.098

通信

Stacking driven Raman spectra change of carbon based 2D semiconductor C₃N

{{article.zuoZhe_CN}}

作者信息 +

Stacking driven Raman spectra change of carbon based 2D semiconductor C₃N

{{article.zuoZhe_EN}}

Author information +

History +

本文亮点

HeighLight

摘要

Abstract

关键词

Key words

引用本文

EndNote

Ris (Procite)

Bibtex

导出引用

{{article.zuoZheCn_L}}. {{article.title_cn}}. {{journal.qiKanMingCheng_CN}}. 2022, 33(05): 2600-2604 https://doi.org/10.1016/j.cclet.2021.09.098

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2022, 33(05): 2600-2604 https://doi.org/10.1016/j.cclet.2021.09.098

参考文献

原文顺序 | 文献年度倒序 | 文中引用次数倒序

参考文献

基金

版权

PDF(329 KB)

Accesses

Citation

Detail

段落导航

Received	Revised	Published
2021-08-09	2021-09-22	2022-05-22
Issue Date
2022-05-22

选择文件类型/文献管理软件名称

选择包含的内容

本文亮点

HeighLight

摘要

Abstract

关键词

Key words

引用本文

{{custom_sec.title}}

{{custom_sec.title}}

参考文献

参考文献

{{custom_fnGroup.title_cn}}

脚注

{{custom_ack.title_cn}}

基金

版权