Controllable n-type doping in WSe<sub>2</sub> monolayer <em>via</em> construction of anion vacancies

doi:10.1016/j.cclet.2021.03.048

中国化学快报 ›› 2021, Vol. 32 ›› Issue (10) : 3118-3122. DOI: 10.1016/j.cclet.2021.03.048

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Controllable n-type doping in WSe₂ monolayer via construction of anion vacancies

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Controllable n-type doping in WSe₂ monolayer via construction of anion vacancies

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{{article.zuoZheCn_L}}. {{article.title_cn}}. {{journal.qiKanMingCheng_CN}}. 2021, 32(10): 3118-3122 https://doi.org/10.1016/j.cclet.2021.03.048

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2021, 32(10): 3118-3122 https://doi.org/10.1016/j.cclet.2021.03.048

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Received	Revised	Published
2021-01-30	2021-03-13	2021-10-22
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2021-10-22

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